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the allegro ? acs722 current sensor ic is an economical and precise solution for ac or dc current sensing in industrial, commercial, and communication systems. the small package is ideal for space constrained applications while also saving costs due to reduced board area. typical applications include motor control, load detection and management, switched-mode power supplies, and overcurrent fault protection. the device consists of a precise, low-offset, linear hall sensor circuit with a copper conduction path located near the surface of the die. applied current flowing through this copper conduction path generates a magnetic field which is sensed by the integrated hall ic and converted into a proportional voltage. device accuracy is optimized through the close proximity of the magnetic field to the hall transducer. a precise, proportional voltage is provided by the low-offset, chopper-stabilized bicmos hall ic, which includes allegros patented digital temperature compensation, resulting in extremely accurate performance over temperature. the output of the device has a positive slope when an increasing current flows through the primary copper conduction path (from pins 1 through 4, to pins 5 through 8), which is the path used for current sensing. the internal resistance of this conductive path is 0.85 m? typical, providing low power loss. the terminals of the conductive path are electrically isolated from the sensor leads (pins 9 through 16). this allows the acs722 current sensor ic to be used in high-side current sense applications without the use of high-side differential amplifiers or other costly isolation techniques. acs722-ds, rev 1 ? patented integrated digital temperature compensation circuitry allows for near closed loop accuracy over temperature in an open loop sensor ? ul60950-1 (ed. 2) certified dielectric strength v oltage = 4.8 kvrms basic isolation w orking voltage = 1097 vrms reinforced isolation working voltage = 565 vrms ? industry-leading noise performance with greatly improved bandwidth through proprietary amplifier and filter design techniques ? pin-selectable band width: 80 khz for high bandwidth applications or 20 khz for low noise performance ? 0.85 m? primary conductor resistance for low power loss and high inrush current withstand capability ? low-profile soic16 package suitable for space- constrained applications ? 3 to 3.6 v, single supply operation ? output voltage proportional to ac or dc current ? factory-trimmed sensitivity and quiescent output voltage for improved accuracy high accuracy, hall-effect based current sensor ic in high isolation soic16 package continued on the next page package: 16-pin soicw (suffix ma) typical application 1 5 2 6 3 7 4 8 +i i c c 0.1 f ?i ip+ ip+ ip+ ip+ ip? ip? ip? ip? p p l bypass p nc gnd nc bw_sel viout nc vcc nc 9 10 11 12 13 14 15 16 acs722 the acs722 outputs an analog signal, v iout , that changes, proportionally, with the bidirectional ac or dc primary sensed current, i p , within the specifi ed measure- ment range. the bw_sel pin can be used to select one of the two bandwidths to opti- mize the noise performance. grounding the bw_sel pin puts the part in the high bandwidth (80 khz) mode. continued on the next page cb certifcate number: us-22339-a1-ul approximate scale 1:1 features and benefits description tv america certificate number: u8v 14 11 54214 030 cb 14 11 54214 029 type tested acs722kma
2 the acs722 is provided in a low profile surface mount soic16 package. the leadframe is plated with 100% matte tin, which is compatible with standard lead (pb) free printed circuit board assembly processes. internally, the device is pb-free, except for flip-chip high- temperature pb-based solder balls, currently exempt from rohs. the device is fully calibrated prior to shipment from the factory. description (continued) ? chopper stabilization results in extremely stable quiescent output voltage ? nearly zero magnetic hysteresis ? ratiometric output from supply voltage features and benefits (continued) selection guide part number i pr (a) sens(typ) at v cc = 3.3 v (mv/a) t a (c) packing 1 acs722kmatr-10ab-t 10 132 -40 to 125 tape and reel, 3000 pieces per reel acs722kmatr-20ab-t 20 66 ACS722KMATR-40AB-T 40 33 1 contact allegro for additional packing options. high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
3 thermal characteristics characteristic symbol test conditions* value units package thermal resistance (junction to ambient) r ja mounted on the allegro 85-0738 evaluation board with 700 mm 2 of 4 oz. copper on each side, connected to pins 1 and 2, and to pins 3 and 4, with thermal vias connecting the layers. performance values include the power consumed by the pcb. 23 oc/w package thermal resistance (junction to lead) r jl mounted on the allegro asek 722 evaluation board. 5 oc/w *additional thermal information available on the allegro website. isolation characteristics characteristic symbol notes rating unit dielectric strength test voltage v iso agency type-tested for 60 seconds per ul 60950-1 (edition. 2). production tested at 3000 v rms for 1 second, in accordance with ul 60950-1 (edition. 2). 4800 v rms working voltage for basic isolation v wvbi maximum approved working voltage for basic (single) isolation according ul 60950-1 (edition 2) 1550 v pk 1097 v rms or vdc working voltage for reinforced isolation v wvri maximum approved working voltage for reinforced isolation according to ul 60950-1 (edition 2) 800 v pk 565 v rms or vdc clearance d cl minimum distance through air from ip leads to signal leads. 7.5 mm creepage d cr minimum distance along package body from ip leads to signal leads 8.2 mm absolute maximum ratings characteristic symbol notes rating units supply voltage v cc 6 v reverse supply voltage v rcc C0.1 v output voltage v iout 25 v reverse output voltage v riout C0.1 v operating ambient temperature t a range k C40 to 125 c junction temperature t j (max) 165 c storage temperature t stg C65 to 165 c specifications high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
4 dynamic offset cancellation master current supply programming control eeprom and control logic offset control sensitivity control tuned filter temperature sensor hall current drive por to all subcircuits ip+ ip+ ip+ ip+ ip ip ip C C C ip C vcc viout gnd bw_sel terminal list table number name description 1, 2, 3, 4 ip+ terminals for current being sensed; fused internally 5, 6, 7, 8 ip- terminals for current being sensed; fused internally 9, 16 nc no internal connection; recommended to be left unconnected in order to maintain high creepage. 10 vcc device power supply terminal 11, 14 nc no internal connection; recommened to connect to gnd for the best esd performance 12 viout analog output signal 13 bw_sel terminal for selecting 20 khz or 80 khz bandwidth 15 gnd signal ground terminal functional block diagram pin-out diagram 1 ip+ 2 ip+ 3 ip+ 4 ip+ 5 ip- 6 ip- 7 ip- 8 ip- 9 nc 10 vcc 11 nc 12 viout 13 bw_sel 14 nc 15 gnd 16 nc high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
5 characteristic symbol test conditions min. typ. max. units supply voltage v cc 3 3.3 3.6 v supply current i cc v cc within v cc (min) and v cc (max) C 9 12 ma output capacitance load c l viout to gnd C C 10 nf output resistive load r l viout to gnd 4.7 C C k? primary conductor resistance r ip t a = 25c C 0.85 C m? magnetic coupling factor c f C 4.5 C g/a rise time t r i p = i p (max), t a = 25c, c l = 1 nf, bw_sel tied to gnd C 4 C s i p = i p (max), t a = 25c, c l = 1 nf, bw_sel tied to vcc C 17.5 C s propagation delay t pd i p = i p (max), t a = 25c, c l = 1 nf, bw_sel tied to gnd C 2 C s i p = i p (max), t a = 25c, c l = 1 nf, bw_sel tied to vcc C 5 C s response time t response i p = i p (max), t a = 25c, c l = 1 nf, bw_sel tied to gnd C 5 C s i p = i p (max), t a = 25c, c l = 1 nf, bw_sel tied to vcc C 22.5 C s internal bandwidth bwi small signal C3 db; c l = 1 nf, bw_sel tied to gnd C 80 C khz small signal C3 db; c l = 1nf, bw_sel tied to vcc C 20 C khz noise density i nd input referenced noise density; t a = 25c, c l = 1 nf C 300 C a (rms) / hz noise i n input referenced noise; bwi = 80 khz, t a = 25c, c l = 1 nf C 84 C ma (rms) input referenced noise; bwi = 20 khz, t a = 25c, c l = 1 nf C 42 C ma (rms) nonlinearity e lin through full range of i p C 1 % saturation voltage 2 v oh r l = 4.7 k?, t a = 25c v cc C 0.33 C C v v ol r l = 4.7 k?, t a = 25c C C 0.33 v power-on time t po output reaches 90% of steady-state level, t a = 25c, i p = i pr (max) applied C 64 C s 1 device may be operated at higher primary current levels, i p , ambient temperatures, t a , and internal leadframe temperatures, provided the maximum junction tempera - ture, t j (max), is not exceeded. 2 the sensor ic will continue to respond to current beyond the range of i p until the high or low saturation voltage; however, the nonlinearity in this region will be worse than through the rest of the measurement range. common electrical characteristics 1: valid through the full range of t a = C40c to 125c , and at v cc = 3.3 v; unless otherwise specifed high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
6 xkmatr-10ab performance characteristics : t a range k, valid at t a = C?40c to 125c, v cc = 3.3 v, unless otherwise specifed characteristic symbol test conditions min. typ. 1 max. units nominal performance current sensing range i pr C10 C 10 a sensitivity sens i pr(min) < i p < i pr(max) C 132 C mv/a zero current output voltage v iout(q) bidirectional; i p = 0 a C v cc x 0.5 C v accuracy performance total output error 2 e tot i p = i pr(max) , t a = 25c to 125c C2.5 1.7 2.5 % i p = i pr(max) , t a = C40c to 25c C 2.5 C % total output error components 3 : e tot = e sens + 100 v oe /(sens i p ) sensitivity error e sens t a = 25c to 125c; measured at i p = i pr(max) C2 1.5 2 % t a = C40c to 25c; ; measured at i p = i pr(max) C 2.3 C % offset voltage 4 v oe i p = 0 a; t a = 25c to 125c C15 7 15 mv i p = 0 a; t a = -40c to 25c C 20 C mv lifetime drift characteristics sensitivity error lifetime drift e sens_drift C 1 C % total output error lifetime drift e tot_drift C 1 C % 1 typical values with +/- are 3 sigma values. 2 percentage of i p , with i p = i pr (max) 3 a single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specifcation. also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. see application information section. 4 offset voltage does not incorporate any error due to external magnetic felds. see section: impact of external magnetic fields. high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
7 xkmatr-20ab performance characteristics : t a range k, valid at t a = C?40c to 125c, v cc = 3.3 v, unless otherwise specifed characteristic symbol test conditions min. typ. 1 max. units nominal performance current sensing range i pr C20 C 20 a sensitivity sens i pr(min) < i p < i pr(max) C 66 C mv/a zero current output voltage v iout(q) bidirectional; i p = 0 a C v cc x 0.5 C v accuracy performance total output error 2 e tot i p = i pr(max) , t a = 25c to 125c C2 1.2 2 % i p = i pr(max) , t a = C40c to 25c C 2.1 C % total output error components 3 : e tot = e sens + 100 v oe /(sens i p ) sensitivity error e sens t a = 25c to 125c; measured at i p = i pr(max) C1.5 0.75 1.5 % t a = C40c to 25c; ; measured at i p = i pr(max) C 1.25 C % offset voltage 4 v oe i p = 0 a; t a = 25c to 125c C10 4.5 10 mv i p = 0 a; t a = -40c to 25c C 10 C mv lifetime drift characteristics sensitivity error lifetime drift e sens_drift C 1 C % total output error lifetime drift e tot_drift C 1 C % 1 typical values with +/- are 3 sigma values. 2 percentage of i p , with i p = i pr (max) 3 a single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specifcation. also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. see application information section. 4 offset voltage does not incorporate any error due to external magnetic felds. see section: impact of external magnetic fields. high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
8 xkmatr-40ab performance characteristics : t a range k, valid at t a = C?40c to 125c, v cc = 3.3 v, unless otherwise specifed characteristic symbol test conditions min. typ. 1 max. units nominal performance current sensing range i pr C40 C 40 a sensitivity sens i pr(min) < i p < i pr(max) C 33 C mv/a zero current output voltage v iout(q) bidirectional; i p = 0 a C v cc x 0.5 C v accuracy performance total output error 2 e tot i p = i pr(max) , t a = 25c to 125c C2 1.25 2 % i p = i pr(max) , t a = C40c to 25c C 2 C % total output error components 3 : e tot = e sens + 100 v oe /(sens i p ) sensitivity error e sens t a = 25c to 125c; measured at i p = i pr(max) C1.5 1.2 1.5 % t a = C40c to 25c; ; measured at i p = i pr(max) C 1.75 C % offset voltage 4 v oe i p = 0 a; t a = 25c to 125c C10 3 10 mv i p = 0 a; t a = -40c to 25c C 5 C mv lifetime drift characteristics sensitivity error lifetime drift e sens_drift C 1 C % total output error lifetime drift e tot_drift C 1 C % 1 typical values with +/- are 3 sigma values. 2 percentage of i p , with i p = i pr (max) 3 a single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specifcation. also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. see application information section. 4 offset voltage does not incorporate any error due to external magnetic felds. see section: impact of external magnetic fields. high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
9 characteristic performance zero current output vo ltage vs. temperature offset voltage vs. temperature sensitivity vs. temperature nonlinearity vs. temperature total error at i vs. temperature pr(max) sensitivity error vs. temperature 25 20 15 10 5 0 -10 -5 -15 -20 temperature (oc) offset voltage (mv) -50 -50 -50 -50 -50 -50 0 0 0 0 0 0 50 50 50 50 50 50 100 100 100 100 100 100 150 150 150 150 150 150 temperature (oc) 1630 1635 1640 1645 1650 1665 1655 1670 1660 1675 v (mv) iout(q) temperature (oc) 129 130 131 132 133 134 135 136 137 sensitivity (mv/a) temperature (oc) sensitivity error (%) -2.00 -1.00 0.00 1.00 2.00 3.00 4.00 temperature (oc) total error (%) -2.00 -1.00 0.00 1.00 2.00 3.00 4.00 temperature (oc) nonlinearity (%) -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.5 1.0 2.0 +3 sigma average -3 sigma xkmatr-10ab key parameters high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
10 zero current output vo ltage vs. temperature offset voltage vs. temperature sensitivity vs. temperature nonlinearity vs. temperature total error at i vs. temperature pr(max) sensitivity error vs. temperature 15 10 5 0 -10 -5 temperature (oc) offset voltage (mv) -50 -50 -50 -50 -50 -50 0 0 0 0 0 0 50 50 50 50 50 50 100 100 100 100 100 100 150 150 150 150 150 150 temperature (oc) 1640 1645 1650 1660 1655 1665 v (mv) iout(q) temperature (oc) 65 65 66 66 67 67 68 68 sensitivity (mv/a) temperature (oc) sensitivity error (%) -2.0 -1.0 -1.5 0.0 0.5 0.5 1.5 1.0 2.0 2.5 temperature (oc) total error (%) -2.0 -1.0 -1.5 0.0 -0.5 0.5 1.0 2.0 1.5 3.0 2.5 temperature (oc) nonlinearity (%) -1.0 -0.8 -0.6 -0.2 -0.4 0.0 0.2 0.4 0.8 0.6 1.0 +3 sigma average -3 sigma xkmatr-20ab key parameters high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
11 zero current output vo ltage vs. temperature offset voltage vs. temperature sensitivity vs. temperature nonlinearity vs. temperature total error at i vs. temperature pr(max) sensitivity error vs. temperature 6 4 2 0 -2 -4 -6 temperature (oc) offset voltage (mv) -50 -50 -50 -50 -50 -50 0 0 0 0 0 0 50 50 50 50 50 50 100 100 100 100 100 100 150 150 150 150 150 150 temperature (oc) 1644 1646 1648 1650 1654 1652 1656 v (mv) iout(q) temperature (oc) 32 33 33 33 33 33 34 34 sensitivity (mv/a) temperature (oc) sensitivity error (%) -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 temperature (oc) total error (%) temperature (oc) nonlinearity (%) -1.0 -2.5 -0.8 -2.0 -0.6 -1.5 -0.4 -1.0 -0.2 -0.5 0.0 0.0 0.2 0.5 0.8 2.0 0.6 1.5 0.4 1.0 1.0 2.5 +3 sigma average -3 sigma xkmatr-40ab key parameters high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
12 sensitivity (sens) the change in sensor ic output in response to a 1 a change through the primary conductor . the sensitivity is the product of the magnetic coupling factor (g / a) (1 g = 0.1 mt)and the linear ic amplifier gain (mv/g). the linear ic amplifier gain is programmed at the factory to optimize the sensitivity (mv/a) for the full-scale current of the device. nonlinearity (e lin ) the nonlinearity is a measure of how linear the output of the sen- sor ic is over the full current measurement range. the nonlinear- ity is calculated as: 1? [{ [{ v iout (i pr (max)) ? v iout(q) 100 (%) e lin = 2 v iout (i pr (max)/2) ? v iout(q) where v iout (i pr(max) ) is the output of the sensor ic with the maximum measurement current flowing through it and v iout (i pr(max) /2) is the output of the sensor ic with half of the maximum measurement current flowing through it. zero current output voltage (v iout(q) ) the output of the sensor when the primary current is zero. for a unipolar supply voltage, it nominally remains at 0.5 v cc for a bidirectional device and 0.1 v cc for a unidirectional device. for example, in the case of a bidirectional output device, v cc = 3.3 v translates into v iout(q) = 1.65 v. variation in v iout(q) can be attributed to the resolution of the allegro linear ic quiescent voltage trim and thermal drift. offset voltage (v oe ) the deviation of the device output from its ideal quiescent value of 0.5 v cc (bidirectional) or 0.1 v cc (unidirectional) due to nonmagnetic causes. to convert this voltage to amperes, divide by the device sensitivity, sens. total output error (e tot ) the the difference between the current measurement from the sensor ic and the actual current (i p ), relative to the actual current. this is equivalent to the difference between the ideal output volt- age and the actual output voltage, divided by the ideal sensitivity, relative to the current flowing through the primary conduction path: e tot (i p ) v iout_ideal (i p ) ? v iout (i p ) sens ideal (i p ) i p 100 (%) = the total output error incorporates all sources of error and is a function of i p . at relatively high currents, e tot will be mostly definitions of accuracy characteristics figure 1: output voltage versus sensed current figure 2: total output error versus sensed current 0 a decreasing v iout (v) accuracy across temperature accuracy across temperature accuracy across temperature accuracy at 25c only accuracy at 25c only accuracy at 25c only increasing v iout (v) ideal v iout i pr (min) i pr (max) +i p (a) ?i p (a) v iout(q) full scale i p +i p ?i p +e tot ?e tot across temperature 25c only due to sensitivity error, and at relatively low currents, e tot will be mostly due to offset voltage (v oe ). in fact, at i p = 0, e tot approaches infinity due to the offset. this is illustrated in figures 1 and 2. figure 1 shows a distribution of output voltages versus i p at 25c and across temperature. figure 2 shows the correspond - ing e tot versus i p . high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
13 application information impact of external magnetic fields the acs722 works by sensing the magnetic field created by the current flowing through the package. however, the sensor cannot differentiate between fields created by the current flow and exter- nal magnetic fields. this means that external magnetic fields can cause errors in the output of the sensor. magnetic fields which are perpendicular to the surface of the package affect the output of the sensor, as it only senses fields in that one plane. the error in amperes can be quantified as: error(b) = b c f where b is the strength of the external field perpendicular to the surface of the package in gauss, and c f is the coupling factor in g/a. then, multiplying by the sensitivity of the part (sens) gives the error in mv. for example, an external field of 1 gauss will result in around 0.22 a of error. if the acs722kmatr-10ab, which has a nomi- nal sensitivity of 132 mv/a, is being used, that equates to 29 mv of error on the output of the sensor. table 1: external magnetic field (gauss) impact external field (gauss) error (a) error (mv) 10ab 20ab 40ab 0.5 0.11 15 7 4 1 0.22 29 15 7 2 0.44 58 29 15 estimating total error vs. sensed current the performance characteristics tables give distribution (3 sigma) values for total error at i_pr(max) ; however, one often wants to know what error to expect at a particular current. this can be estimated by using the distribution data for the compo- nents of total error, sensitivity error and offset voltage. the 3 sigma value for total error (e tot ) as a function of the sensed current (i p ) is estimated as: e( i) = to tp 100 v oe sens i p e+ sens 2 () 2 here, e sens and v oe are the 3 sigma values for those error terms. if there is an average sensitivity error or average offset voltage, then the average total error is estimated as: sens i p e( i) = e+ to tp sens av ga vg 100 v oe av g the resulting total error will be a sum of e tot and e tot_avg . using these equations and the 3 sigma distributions for sensitiv- ity error and offset voltage, the total error vs. sensed current (i p ) is below for the acs722kmatr-40ab. as expected, as one goes towards zero current, the error in percent goes towards infin- ity due to division by zero (refer to figure 3) 15.00 10.00 5.00 0.00 -5.00 -10.00 -15.00 0 51 015202 5 30 35 40 -40c+3sig -40c-3sig 25c+3sig 25c-3sig 125c+3sig 125c-3sig current (a) total error (% of current measured) figure 3: predicted total error as a function of sensed current for the acs722kmatr-40ab high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
14 definitions of dynamic response characteristics power-on time (t po ) when the supply is ramped to its operating voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. power-on time (t po ) is defined as the time it takes for the output voltage to settle within 10% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage (v cc(min) ) as shown in the chart at right (refer to figure 4). rise time (t r ) the time interval between: a) when the sensor ic reaches 10% of its full scale value; and b) when it reaches 90% of its full scale value (refer to figure 5). the rise time to a step response is used to derive the bandwidth of the current sensor ic, in which ?(C3 db) = 0.35 / t r . both t r and t response are detrimentally affected by eddy current losses observed in the conductive ic ground plane. propagation delay (t pd ) the propagation delay is measured as the time interval between: a) when the primary current signal reaches 20% of its final value; and b) when the device reaches 20% of its output corresponding to the applied current (refer to figure 5). response time (t response ) the time interval between: a) when the primary current signal reaches 90% of its final value; and b) when the device reaches 90% of its output corresponding to the applied current (refer to figure 6). v iout v t v cc v cc (min.) 90% v iout 0 t 1 = time at which power supply reaches minimum specified operating voltage t 2 = time at which output voltage settles within 10% of its steady state value under an applied magnetic field t 1 t 2 t po v cc (typ.) primary current v iout 90 0 (%) response time, t response t primary current v iout 90 10 20 0 (%) propagation delay, t pd rise time, t r t figure 4: power-on time figure 5: rise time and propagation delay figure 6: response time high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
15 7.25 2.25 3.56 1.27 1.27 0.65 15.75 9.54 17.27 21.51 package outline slot in pcb to maintain >8 mm creepage once part is on pcb current in current out perimeter holes for stitching to the other, matching current trace design, layers of the pcb for enhanced thermal capability. not to scale all dimensions in millimeters. figure 7: high-isolation pcb layout high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
16 figure 8: package ma, 16-pin soicw package outline drawing for reference only ? not for tooling use (reference ms-013aa) nott o scale dimensions in millimeters dimensions exclusive of mold ?ash, gate burrs, and dambar protrusions exact case and lead con?guration at supplier discretion within limits shown c 1.27 bsc a b c b 21 1 16 branding scale and appearance at supplier discretion c seating plane c 0.10 16x 0.25 bsc 1.40 ref 2.65 max 10.30 0.20 7.50 0.10 10.30 0.33 0.51 0.31 0.30 0.10 0.33 0.20 1.27 0.40 8 0 a standard branding reference vi ew branded face seating plane gauge plane nnnnnnn llllllll = device part number = assembly lot number, first eight characters n l te rminal #1 mark area c 2 1 16 0.65 1.27 9.50 2.25 pcb layout reference vi ew reference land pattern layout (reference ipc7351 soic127p600x175-8m); all pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and pcb layout tolerances high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
17 for the latest version of this document, visit our website: www.allegromicro.com copyright ?2011-2016, allegro microsystems, llc allegro microsystems, llc reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. before placing an order, the user is cautioned to verify that the information being relied upon is current. allegros products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of allegros product can reasonably be expected to cause bodily harm. the information included herein is believed to be accurate and reliable. however, allegro microsystems, llc assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. revision date change C march 4, 2015 initial release 1 april 13, 2016 corrected package outline drawing branding information (page 16). document revision history high accuracy, hall-effect based current sensor ic in high isolation soic16 package acs722kma allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com

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